Invention Grant
- Patent Title: Data access method, memory control circuit unit and memory storage device
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Application No.: US16153828Application Date: 2018-10-08
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Publication No.: US10977116B2Publication Date: 2021-04-13
- Inventor: Chih-Kang Yeh
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: TW107129490 20180823
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C29/52 ; G11C29/42 ; G11C16/10 ; G11C16/26 ; G11C29/44 ; G06F11/22 ; G11C16/04

Abstract:
A data access method, a memory control circuit unit and a memory storage device are provided. The method includes generating a first error correction code corresponding to received first data according to a first error correction encoding operation; and generating a second error correction code corresponding to received second data according to a second error correction encoding operation, wherein the second error correction code includes a first and a second partial error correction code. The method further includes writing the first data, the first error correction code and the second partial error correction code to a data bit area and a redundant bit area of a first physical programming unit respectively; and writing the second data and the first partial error correction code to the data bit area and the redundant bit area of a second physical programming unit respectively.
Public/Granted literature
- US20200065187A1 DATA ACCESS METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE DEVICE Public/Granted day:2020-02-27
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