Invention Grant
- Patent Title: Epitaxial growth on semiconductor structures
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Application No.: US16445507Application Date: 2019-06-19
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Publication No.: US10978295B2Publication Date: 2021-04-13
- Inventor: Guangjun Yang , Nicholas R. Tapias
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L27/105
- IPC: H01L27/105 ; H01L27/22 ; H01L21/02 ; G11C5/06 ; H01L27/24
Abstract:
Systems, apparatuses, and methods related to epitaxial growth on semiconductor structures are described. An apparatus may include a working surface of a substrate material and a storage node connected to an active area of an access device on the working surface. The apparatus may also include a material epitaxially grown over the storage node contact to enclose a non-solid space between the storage node contact and passing sense lines.
Information query
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