Invention Grant
- Patent Title: Data storing method, memory controlling circuit unit and memory storage device
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Application No.: US16209986Application Date: 2018-12-05
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Publication No.: US10997067B2Publication Date: 2021-05-04
- Inventor: Chih-Kang Yeh
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: TW107137848 20181025
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F3/06 ; G11C16/34 ; G11C29/52 ; G11C11/56

Abstract:
A data storing method, a memory controlling circuit unit and a memory storage device are provided. The method includes: receiving a first data; determining whether a wear degree value of a rewritable non-volatile memory module is less than a threshold; if the wear degree value of the rewritable non-volatile memory module is less than the threshold, storing the first data into the rewritable non-volatile memory module by using a first mode; and if the wear degree value of the rewritable non-volatile memory module is not less than the threshold, storing the first data into the rewritable non-volatile memory module by using a second mode. A reliability of the first data stored by using the first mode is higher than a reliability of the first data stored by using the second mode.
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