Invention Grant
- Patent Title: Bottom-up material formation for planarization
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Application No.: US15597734Application Date: 2017-05-17
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Publication No.: US11022886B2Publication Date: 2021-06-01
- Inventor: Ming-Hui Weng , Cheng-Han Wu , Ching-Yu Chang , Chin-Hsiang Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/16
- IPC: G03F7/16 ; H01L21/02 ; H01L21/321 ; H01L21/308 ; H01L21/027 ; H01L21/3105 ; G03F7/039 ; G03F7/38 ; H01L21/311
Abstract:
The present disclosure provides a method for planarization. The method includes providing a substrate having a top surface and a trench recessed from the top surface; coating a sensitive material layer on the top surface of the substrate, wherein the sensitive material layer fills in the trench; performing an activation treatment to the sensitive material layer so that portions of the material layer are chemically changed; and performing a wet chemical process to the sensitive material layer so that top portions of the sensitive material layer above the trench are removed, wherein remaining portions of the sensitive material layer have top surfaces substantially coplanar with the top surface of the substrate.
Public/Granted literature
- US20180337036A1 Bottom-Up Material Formation for Planarization Public/Granted day:2018-11-22
Information query
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