Invention Grant
- Patent Title: Semiconductor substrate, semiconductor package, and method for forming the same
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Application No.: US16878475Application Date: 2020-05-19
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Publication No.: US11024555B2Publication Date: 2021-06-01
- Inventor: Cheng-Lin Ho , Chih-Cheng Lee
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/00 ; H01L23/367 ; H01L23/373

Abstract:
The present disclosure provides a semiconductor substrate, including a first patterned conductive layer, a dielectric structure on the first patterned conductive layer, wherein the dielectric structure having a side surface, a second patterned conductive layer on the dielectric structure and extending on the side surface, and a third patterned conductive layer on the second patterned conductive layer and extending on the side surface. The present disclosure provides a semiconductor package including the semiconductor substrate. A method for manufacturing the semiconductor substrate and the semiconductor package is also provided.
Public/Granted literature
- US20200279788A1 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR PACKAGE, AND METHOD FOR FORMING THE SAME Public/Granted day:2020-09-03
Information query
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