Invention Grant
- Patent Title: Antenna with graded dielectirc and method of making the same
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Application No.: US15892632Application Date: 2018-02-09
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Publication No.: US11031699B2Publication Date: 2021-06-08
- Inventor: Saravana Maruthamuthu , Bernd Waidhas , Andreas Augustin , Georg Seidemann
- Applicant: Intel IP Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel IP Corporation
- Current Assignee: Intel IP Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01Q19/06
- IPC: H01Q19/06 ; H01Q15/08 ; H01L23/66 ; H01L23/528 ; H01L23/498 ; H01L23/522 ; H01L23/00 ; H01L21/56 ; H01L21/3205 ; H01L21/48 ; H01L21/768 ; H01L23/13 ; H01Q1/48

Abstract:
Some embodiments include packages and methods of making the packages. One of the packages includes a ground layer (e.g., a ground plane) of metal formed over a chip of die, an antenna element of metal formed over the ground layer, and a dielectric lens formed over the antenna element. The dielectric lens includes a plurality of dielectric layers that have graded dielectric constants in a decreasing order along a direction from the antenna element toward a top surface of the package.
Public/Granted literature
- US20190252792A1 ANTENNA WITH GRADED DIELECTIRC AND METHOD OF MAKING THE SAME Public/Granted day:2019-08-15
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