Invention Grant
- Patent Title: Transistors with channel and sub-channel regions with distinct compositions and dimensions
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Application No.: US16636206Application Date: 2017-09-28
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Publication No.: US11069795B2Publication Date: 2021-07-20
- Inventor: Karthik Jambunathan , Glenn A. Glass , Anand S. Murthy , Jun Sung Kang , Bruce E. Beattie , Anupama Bowonder , Biswajeet Guha , Ju H. Nam , Tahir Ghani
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2017/054034 WO 20170928
- International Announcement: WO2019/066857 WO 20190404
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/088 ; H01L27/092 ; H01L29/06 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/775 ; H01L29/78 ; H01L29/786

Abstract:
Integrated circuits include fins including an upper/channel region and a lower/sub-channel region, the lower region having a first chemical composition and opposing sidewalls adjacent to an insulator material, and the upper region having a second chemical composition. A first width indicates the distance between the opposing sidewalls of the lower region at a first location is at least 1 nm wider than a second width indicating the distance between the opposing sidewalls of the upper region at a second location, the first location being within 10 nm of the second location (or otherwise relatively close to one another). The first chemical composition is distinct from the second chemical composition and includes a surface chemical composition at an outer surface of the opposing sidewalls of the lower region and a bulk chemical composition therebetween, the surface chemical composition including one or more of oxygen, nitrogen, carbon, chlorine, fluorine, and sulfur.
Information query
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