Invention Grant
- Patent Title: Optical semiconductor element and method of manufacturing optical semiconductor element
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Application No.: US16386604Application Date: 2019-04-17
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Publication No.: US11075315B2Publication Date: 2021-07-27
- Inventor: Masahiro Hitaka , Akio Ito , Tatsuo Dougakiuchi , Kazuue Fujita , Tadataka Edamura
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: JPJP2018-081549 20180420
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/173 ; H01S5/34 ; H01L31/0352 ; H01L31/0224 ; H01S5/02 ; H01S5/22 ; H01S5/042 ; H01S5/343 ; H01L31/0304 ; G01N21/25 ; H01S5/026

Abstract:
An optical semiconductor element includes a semiconductor substrate, a first laminated structure provided on a front surface of the semiconductor substrate, and a second laminated structure provided on the front surface of the semiconductor substrate, the first laminated structure includes a first quantum cascade region, the second laminated structure includes a dummy region having the same layer structure as the first quantum cascade region, a second quantum cascade region provided on the front surface of the semiconductor substrate via the dummy region, and one of the first quantum cascade region and the second quantum cascade region is a quantum cascade laser, and the other of the first quantum cascade region and the second quantum cascade region is a quantum cascade detector.
Public/Granted literature
- US20190326466A1 OPTICAL SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR ELEMENT Public/Granted day:2019-10-24
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