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    Method of manufacturing quantum cascade laser beam source
    2.
    发明授权
    Method of manufacturing quantum cascade laser beam source 有权

    公开(公告)号：US10439363B2

    公开(公告)日：2019-10-08

    申请号：US16121825

    申请日：2018-09-05

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Akio Ito ,  Kazuue Fujita ,  Daisuke Kawaguchi ,  Tatsuo Dougakiuchi ,  Tadataka Edamura

    IPC: H01S5/028 ,  H01S5/34 ,  H01S5/22

    Abstract: A method of manufacturing a quantum cascade laser beam source (1) includes: preparing a semiconductor stacked body (20); forming a pair of first excavated portions (41 and 42) and a ridge portion which is interposed between the pair of first excavated portions (41 and 42); forming channel structures (51 and 52) and circumferential edge portions (61 and 62) which are formed to interpose the channel structures (51 and 52) between the ridge portion (30) and the circumferential edge portion; forming an electrode pattern (81) in contact with a first area (29a) and forming an electrode pattern (82) in contact with a second area (22a); fixing a crystal growth surface side to a support substrate (91); removing an Fe-doped (semi-insulating) InP single-crystal substrate (21); fixing a Si substrate (93); and peeling the support substrate (91).

    Quantum cascade detector
    3.
    发明授权
    Quantum cascade detector 有权
    量子级联检测器

    公开(公告)号：US09276144B2

    公开(公告)日：2016-03-01

    申请号：US14525415

    申请日：2014-10-28

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Kazuue Fujita ,  Toru Hirohata ,  Tadataka Edamura ,  Tatsuo Dougakiuchi

    IPC: H01L31/00 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/105 ,  H01L31/0687

    CPC classification number: H01L31/035236 ,  H01L31/06875 ,  H01L31/09 ,  H01L31/105

    Abstract: A quantum cascade detector includes a semiconductor substrate, and an active layer formed by laminating unit laminate structures each having an absorption region with a first barrier layer to a second well layer and a transport region with a third barrier layer to an n-th well layer. A second absorption well layer has a layer thickness ½ or less of that of a first absorption well layer thickest in one period, and a coupling barrier layer has a layer thickness smaller than that of an exit barrier layer thickest in one period. The unit laminate structure has a detection lower level arising from a ground level in the first well layer, a detection upper level generated by coupling an excitation level in the first well layer and a ground level in the second well layer, and a transport level structure for electrons.

    Abstract translation: 量子级联检测器包括半导体衬底和通过层叠单元层压结构形成的有源层，每个层叠结构具有带有第一阻挡层的吸收区域到第二阱层以及具有第三阻挡层到第n阱层的传输区域 。 第二吸收阱层具有在一个周期中最厚的第一吸收阱层的层厚度的1/2或更小，并且耦合阻挡层的层厚度小于在一个周期中最厚的出口阻挡层的层厚度。 单元层叠结构具有从第一阱层的地电平产生的检测下位电平，通过耦合第一阱层中的激发电平而产生的检测上限电平和第二阱层中的接地电平，以及传输电平结构 对于电子。

    Optical kit and optical device
    4.
    发明授权
    Optical kit and optical device 有权

    公开(公告)号：US12176681B2

    公开(公告)日：2024-12-24

    申请号：US17439884

    申请日：2020-01-14

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Tatsuo Dougakiuchi ,  Yoichi Kawada

    IPC: H01S5/14 ,  H01S5/02325 ,  H01S5/34

    Abstract: An optical kit includes a base including a main surface; and a holding unit provided on the main surface to hold an optical system. The holding unit includes a lens holding unit that holds a lens, a reflector holding unit that holds a corner reflector, a first aperture member holding unit that holds a first aperture member, a second aperture member holding unit that holds a second aperture member, and a third aperture member holding unit that holds a third aperture member. The reflector holding unit includes a first mechanism that holds an entirety of the corner reflector so as to be rotatable along the main surface, and a second mechanism configured to adjust an optical axis of a diffracted light in each of a reflective diffraction grating and a mirror.

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