Invention Grant
- Patent Title: Photosensitive groups in resist layer
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Application No.: US15994091Application Date: 2018-05-31
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Publication No.: US11127592B2Publication Date: 2021-09-21
- Inventor: Ya-Ching Chang , Ching-Yu Chang , Chin-Hsiang Lin , Yen-Hao Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/004
- IPC: G03F7/004 ; H01L21/027 ; H01L21/02 ; G03F7/00 ; G03F7/095 ; G03F7/16 ; B05D1/00

Abstract:
A method includes forming a photoresist layer over a substrate, where the photoresist layer includes a polymer blended with a photo-acid generator (PAG), exposing the photoresist layer to a radiation source, and developing the photoresist layer, resulting in a patterned photoresist layer. The PAG is bonded to one or more polarity-enhancing group (PEG), which is configured to increase a dipole moment of the PAG. The exposing may separate the PAG into a cation and an anion, such that a PEG bonded to the cation and a PEG bonded to the anion each increases a polarity of the cation and the anion, respectively.
Information query
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