Invention Grant
- Patent Title: Circuit carrier structure and manufacturing method thereof
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Application No.: US16845069Application Date: 2020-04-10
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Publication No.: US11153963B2Publication Date: 2021-10-19
- Inventor: Chang-Fu Chen , Ho-Shing Lee , Chien-Chen Lin
- Applicant: Unimicron Technology Corp.
- Applicant Address: TW Taoyuan
- Assignee: Unimicron Technology Corp.
- Current Assignee: Unimicron Technology Corp.
- Current Assignee Address: TW Taoyuan
- Agency: JCIPRNET
- Priority: TW109107751 20200310
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H05K3/00 ; H05K1/11 ; H05K3/06 ; H05K3/46

Abstract:
A circuit carrier structure includes an inner circuit structure, at least one first circuit layer, and at least one heat dissipating structure. The inner circuit structure has a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface of the inner circuit structure. The heat dissipating structure is disposed in the first circuit layer. The heat dissipating structure includes a first heat dissipating pattern, a second heat dissipating pattern and an interlayer metal layer. The first heat dissipating pattern is embedded in the corresponding first circuit layer. The second heat dissipating pattern is disposed on the first heat dissipating pattern. The interlayer metal layer is disposed between the first heat dissipating pattern and the second heat dissipating pattern. A manufacturing method of the circuit carrier structure is also provided.
Public/Granted literature
- US20210289614A1 CIRCUIT CARRIER STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-09-16
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