Invention Grant
- Patent Title: Doped photovoltaic semiconductor layers and methods of making
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Application No.: US16488275Application Date: 2018-02-22
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Publication No.: US11158749B2Publication Date: 2021-10-26
- Inventor: Sachit Grover , Stuart Irvine , Xiaoping Li , Roger Malik , Shahram Seyedmohammadi , Gang Xiong , Wei Zhang
- Applicant: First Solar, Inc.
- Applicant Address: US AZ Tempe
- Assignee: First Solar, Inc.
- Current Assignee: First Solar, Inc.
- Current Assignee Address: US AZ Tempe
- Agency: MacMillan, Sobanski & Todd, LLC
- International Application: PCT/US2018/019129 WO 20180222
- International Announcement: WO2018/156698 WO 20180830
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0296
Abstract:
Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.
Public/Granted literature
- US20210143288A1 DOPED PHOTOVOLTAIC SEMICONDUCTOR LAYERS AND METHODS OF MAKING Public/Granted day:2021-05-13
Information query
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