公开(公告)号：US20230082990A1

公开(公告)日：2023-03-16

申请号：US17986747

申请日：2022-11-14

Applicant: First Solar, Inc.

Inventor： Hongbo Cao ,  Sachit Grover ,  William Hullinger Huber ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Hongying Peng ,  Joseph John Shiang ,  Qianqian Xin ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm−3. The absorber layer can include oxygen in a central region of the absorber layer. The absorber layer can include an alkali metal in the central region of the absorber layer. Methods for carrier activation can include exposing an absorber layer to an annealing compound in a reducing environment. The annealing compound can include cadmium chloride and an alkali metal chloride.

公开(公告)号：US20200035844A1

公开(公告)日：2020-01-30

申请号：US16488808

申请日：2018-02-27

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Chungho Lee ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/0304 ,  H01L31/05 ,  H01L31/18

Abstract: According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.

公开(公告)号：US11342471B2

公开(公告)日：2022-05-24

申请号：US16488808

申请日：2018-02-27

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Chungho Lee ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/05 ,  H01L31/18 ,  H01L31/0304

Abstract: According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.

公开(公告)号：US11158749B2

公开(公告)日：2021-10-26

申请号：US16488275

申请日：2018-02-22

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Stuart Irvine ,  Xiaoping Li ,  Roger Malik ,  Shahram Seyedmohammadi ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/18 ,  H01L31/0296

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

公开(公告)号：US11791427B2

公开(公告)日：2023-10-17

申请号：US17509710

申请日：2021-10-25

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Stuart Irvine ,  Xiaoping Li ,  Roger Malik ,  Shahram Seyedmohammadi ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/02963 ,  H01L31/1828 ,  H01L31/1864

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

公开(公告)号：US11367805B2

公开(公告)日：2022-06-21

申请号：US16316897

申请日：2017-07-12

Applicant: First Solar, Inc.

Inventor： Andrei Los ,  Roger Malik

IPC: H01L31/101 ,  H01L31/112 ,  H01L31/02 ,  H01L31/0232

Abstract: Solar cells, absorber structures, back contact structures, and methods of making the same are described. The solar cells and absorber structures include a pseudomorphically strained electron reflector layer.

公开(公告)号：US20130112288A1

公开(公告)日：2013-05-09

申请号：US13667479

申请日：2012-11-02

Applicant: First Solar, Inc.

Inventor： Litian Liu ,  Erel Milshtein ,  Ulrich A. Bonne ,  Valentin Gefter ,  Roger Malik ,  Raffi Garabedian

IPC: F16L53/00

CPC classification number: C23C14/243 ,  Y10T137/6416

Abstract: A system and method employing a heater-orifice may be used to heat a flow path and to control the supply of vapor from a vaporizable material to an object. Variable or constant diameter heating rods may be used to apply heat to a flow path in order to control the supply of vapor from a vaporizable material. A baffle plate may be used to control the vapor pressure and vapor flow from a vessel containing a vaporizable material. The heater-orifice, heating rods, and baffle plate may be used alone or in combination with one another to control the flow of vaporizable material.

Abstract translation: 可以使用采用加热器孔的系统和方法来加热流路并控制从可汽化材料到物体的蒸汽供应。 可变的或恒定的直径的加热棒可用于向流动路径施加热量，以便控制来自可汽化材料的蒸气的供应。 挡板可用于控制来自含有可汽化材料的容器的蒸气压和蒸气流。 加热器孔，加热棒和挡板可以单独使用或彼此组合使用以控制可汽化材料的流动。

公开(公告)号：US12261231B2

公开(公告)日：2025-03-25

申请号：US17751189

申请日：2022-05-23

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Chungho Lee ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/0304 ,  H01L31/05 ,  H01L31/18

Abstract: According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.

公开(公告)号：US11502212B2

公开(公告)日：2022-11-15

申请号：US16770388

申请日：2017-12-07

Applicant: First Solar, Inc.

Inventor： Hongbo Cao ,  Sachit Grover ,  William Hullinger Huber ,  Xiaoping Li ,  Dingyuan Lu ,  Roger Malik ,  Hongying Peng ,  Joseph John Shiang ,  Qianqian Xin ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm−3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.

公开(公告)号：US11201257B2

公开(公告)日：2021-12-14

申请号：US16966424

申请日：2019-01-14

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Dingyuan Lu ,  Roger Malik ,  Gang Xiong

IPC: H01L31/18 ,  H01L31/0296 ,  H01L31/073

Abstract: According to the embodiments provided herein, a method for doping an absorber layer can include contacting the absorber layer with an annealing compound. The annealing compound can include cadmium chloride and a group V salt comprising an anion and a cation. The anion, the cation, or both can include a group V element. The method can include annealing the absorber layer, whereby the absorber layer is doped with at least a portion of the group V element of the annealing compound.