公开(公告)号：US20250169199A1

公开(公告)日：2025-05-22

申请号：US19030859

申请日：2025-01-17

Applicant: First Solar, Inc.

Inventor： Markus Gloeckler ,  Fang Mei ,  Wei Zhang

IPC: H10F10/161 ,  H10F10/162 ,  H10F77/123 ,  H10F77/20

Abstract: A photovoltaic device includes a substrate, a semiconductor stack and a transparent tunnel junction. The semiconductor stack includes an n-type layer selected from a first transparent conductive oxide layer, or a window layer, or both; and a p-type absorber layer disposed on the n-type layer, wherein the absorber layer consists essentially of CdSexTe(1-x), wherein x is from 1 to about 40 at. %. The transparent tunnel junction comprises a transparent interface layer of CdyZn(1-y)Te doped to be p+type, and a transparent contact layer doped to be n+type, and the interface layer is disposed between the p-type absorber layer and the transparent contact layer. In bifacial embodiments, the tunnel junction forms a transparent back contact and electrode; and in multi-junction embodiments, the tunnel junction forms a diode-like connector between top and bottom cells. The transparent contact layer may comprise tin oxide or zinc oxide doped with aluminum, fluorine or indium.

公开(公告)号：US12119416B2

公开(公告)日：2024-10-15

申请号：US17287988

申请日：2019-10-23

Applicant: First Solar, Inc.

Inventor： Le Chen ,  Sachit Grover ,  Jason Kephart ,  Sergei Kniajanski ,  Chungho Lee ,  Xiaoping Li ,  Feng Liao ,  Dingyuan Lu ,  Rajni Mallick ,  Wenming Wang ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/0216 ,  H01L31/0296 ,  H01L31/073

CPC classification number: H01L31/02167 ,  H01L31/02963 ,  H01L31/073

Abstract: According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.

公开(公告)号：US20240063316A1

公开(公告)日：2024-02-22

申请号：US18380519

申请日：2023-10-16

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Stuart Irvine ,  Xiaoping Li ,  Roger Malik ,  Shahram Seyedmohammadi ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/02963 ,  H01L31/1828 ,  H01L31/1864

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

公开(公告)号：US20210143288A1

公开(公告)日：2021-05-13

申请号：US16488275

申请日：2018-02-22

Applicant: First Solar, Inc.

Inventor： Sachit Grover ,  Stuart Irvine ,  Xiaoping Li ,  Roger Malik ,  Shahram Seyedmohammadi ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/0296 ,  H01L31/18

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

公开(公告)号：US20250120219A1

公开(公告)日：2025-04-10

申请号：US18914841

申请日：2024-10-14

Applicant: First Solar, Inc.

Inventor： Le Chen ,  Sachit Grover ,  Jason Kephart ,  Sergei Kniajanski ,  Chungho Lee ,  Xiaoping Li ,  Feng Liao ,  Dingyuan Lu ,  Rajni Mallick ,  Wenming Wang ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/0216 ,  H01L31/0296 ,  H01L31/073

Abstract: According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.

公开(公告)号：US20200343402A1

公开(公告)日：2020-10-29

申请号：US16956366

申请日：2018-12-20

Applicant: First Solar, Inc.

Inventor： Paul King ,  Xiaoping Li ,  Roger Malik ,  Gang Xiong ,  Wei Zhang

IPC: H01L31/103 ,  H01L31/0296 ,  H01L31/18

Abstract: According to the embodiments provided herein, a photovoltaic device can have an energy side configured to be exposed to a light source. The photovoltaic device can include an absorber layer. The absorber layer can include a first surface facing the energy side and a thickness defined between the first surface and a second surface. The absorber layer can include mercury having a mole fraction y, cadmium having a mole fraction (1−y), and tellurium. The mole fraction y of the mercury can vary through the thickness of the absorber layer with distance from the first surface of the absorber layer.

公开(公告)号：US20190296174A1

公开(公告)日：2019-09-26

申请号：US16340984

申请日：2017-10-11

Applicant: First Solar, Inc.

Inventor： Markus Gloeckler ,  Fang Mei ,  Wei Zhang

IPC: H01L31/0725 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/073

Abstract: A photovoltaic device includes a substrate, a semiconductor stack and a transparent tunnel junction. The semiconductor stack includes an n-type layer selected from a first transparent conductive oxide layer, or a window layer, or both; and a p-type absorber layer disposed on the n-type layer, wherein the absorber layer consists essentially of CdSexTe(1-x), wherein x is from 1 to about 40 at. %. The transparent tunnel junction comprises a transparent interface layer of CdyZn(1-y)Te doped to be p+type, and a transparent contact layer doped to be n+type, and the interface layer is disposed between the p-type absorber layer and the transparent contact layer. In bifacial embodiments, the tunnel junction forms a transparent back contact and electrode; and in multi-junction embodiments, the tunnel junction forms a diode-like connector between top and bottom cells. The transparent contact layer may comprise tin oxide or zinc oxide doped with aluminum, fluorine or indium. The photovoltaic device may also include an electron reflector layer and/or an optical reflector layer.

公开(公告)号：US12249664B2

公开(公告)日：2025-03-11

申请号：US18027584

申请日：2021-09-21

Applicant: First Solar, Inc.

Inventor： James Becker ,  Mark Hendryx ,  William Huber ,  Jason Kephart ,  Andrei Los ,  Wei Zhang

IPC: H01L31/0224 ,  H01L31/0272 ,  H01L31/0445 ,  H01L31/0725

Abstract: Photovoltaic devices having transparent contact layers are described herein.

公开(公告)号：US12206037B2

公开(公告)日：2025-01-21

申请号：US16340984

申请日：2017-10-11

Applicant: First Solar, Inc.

Inventor： Markus Gloeckler ,  Fang Mei ,  Wei Zhang

IPC: H01L31/044 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/0725 ,  H01L31/073

Abstract: A photovoltaic device includes a substrate, a semiconductor stack and a transparent tunnel junction. The semiconductor stack includes an n-type layer selected from a first transparent conductive oxide layer, or a window layer, or both; and a p-type absorber layer disposed on the n-type layer, wherein the absorber layer consists essentially of CdSexTe(1-x), wherein x is from 1 to about 40 at. %. The transparent tunnel junction comprises a transparent interface layer of CdyZn(1-y)Te doped to be p+type, and a transparent contact layer doped to be n+type, and the interface layer is disposed between the p-type absorber layer and the transparent contact layer. In bifacial embodiments, the tunnel junction forms a transparent back contact and electrode; and in multi-junction embodiments, the tunnel junction forms a diode-like connector between top and bottom cells. The transparent contact layer may comprise tin oxide or zinc oxide doped with aluminum, fluorine or indium. The photovoltaic device may also include an electron reflector layer and/or an optical reflector layer.

公开(公告)号：US20230402554A1

公开(公告)日：2023-12-14

申请号：US18027584

申请日：2021-09-21

Applicant: First Solar, Inc.

Inventor： James Becker ,  Mark Hendryx ,  William Huber ,  Jason Kephart ,  Andrei Los ,  Wei Zhang

IPC: H01L31/0224 ,  H01L31/0725 ,  H01L31/0445 ,  H01L31/0272

CPC classification number: H01L31/022475 ,  H01L31/02725 ,  H01L31/0445 ,  H01L31/0725

Abstract: Photovoltaic devices having transparent contact layers are described herein.