Invention Grant
- Patent Title: Heat dissipation substrate and manufacturing method thereof
-
Application No.: US16898417Application Date: 2020-06-10
-
Publication No.: US11171072B2Publication Date: 2021-11-09
- Inventor: Chien-Hung Wu , Bo-Yu Huang , Chia-Wei Chang , Tzu-Shih Shen
- Applicant: Subtron Technology Co., Ltd.
- Applicant Address: TW Hsinchu County
- Assignee: Subtron Technology Co., Ltd.
- Current Assignee: Subtron Technology Co., Ltd.
- Current Assignee Address: TW Hsinchu County
- Agency: JCIPRNET
- Priority: TW108128492 20190812
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H05K1/02 ; H01L33/64 ; H01L21/48 ; H01L23/498

Abstract:
A heat dissipation substrate includes a substrate, a heat conducting element, an insulating filling material, a first circuit layer, and a second circuit layer. The substrate has a first surface, a second surface opposite the first surface, and a through groove communicating the first surface with the second surface. The heat conducting element is disposed in the through groove. The heat conducting element includes an insulating material layer and at least one metal layer. The insulating filling material is filled in the through groove for fixing the heat conducting element into the through groove. The first circuit layer is disposed on the first surface of the substrate and exposes a portion of the heat conducting element. The second circuit layer is disposed on the second surface of the substrate. The first circuit layer and the metal layer are respectively disposed on two opposite sides of the insulating material layer.
Public/Granted literature
- US20210050276A1 HEAT DISSIPATION SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-02-18
Information query
IPC分类: