Invention Grant
- Patent Title: Semiconductor structure having a bridge layer
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Application No.: US16549822Application Date: 2019-08-23
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Publication No.: US11227975B2Publication Date: 2022-01-18
- Inventor: Yung-Fu Chang , Fan-Lei Wu , Shih-Chang Lee , Wen-Luh Liao , Hung-Ta Cheng , Chih-Chaing Yang , Yao-Ru Chang , Yi Hsiao , Hsiang Chang
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Ditthavong, Steiner & Mlotkowski
- Priority: TW107130027 20180828
- Main IPC: H01L33/20
- IPC: H01L33/20

Abstract:
A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.
Public/Granted literature
- US20200075807A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2020-03-05
Information query
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