A method for evaluating a secondary optical system of an electron beam inspection device provided with a primary optical system that irradiates a sample placed at an observation target position with an electron beam emitted from an electron source, and the secondary optical system that forms, on a detector, an enlarged image of an electron beam generated from the sample or an electron beam transmitted through the sample. The method includes: placing a photoelectric surface at the observation target position; irradiating the photoelectric surface with laser; forming an enlarged image of an electron beam generated from the photoelectric surface on the detector by the secondary optical system; and evaluating the secondary optical system based on an electron beam image obtained by the detector.