Invention Grant
- Patent Title: Humidity control in EUV lithography
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Application No.: US16905167Application Date: 2020-06-18
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Publication No.: US11307504B2Publication Date: 2022-04-19
- Inventor: An-Ren Zi , Chin-Hsiang Lin , Ching-Yu Chang , Joy Cheng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/038 ; G03F7/039 ; G03F7/06 ; G03F7/16 ; G03F7/30 ; G03F7/32 ; G03F7/38 ; G03F7/40 ; H01L21/027

Abstract:
A layer is formed over a wafer. The layer contains a material that is sensitive to an extreme ultraviolet (EUV) radiation. A first baking process is performed to the layer. The first baking process is performed with a first humidity level that is greater than about 44%. After the first baking process, the layer is exposed to EUV radiation. A second baking process is performed to the layer. The second baking process is performed with a second humidity level that is greater than about 44%. The layer is rinsed with a liquid that contains water before the second baking process or after the second baking process. After the exposing, the layer is developed with a developer solution that contains water.
Public/Granted literature
- US20200319565A1 Humidity Control in EUV Lithography Public/Granted day:2020-10-08
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