Invention Grant
- Patent Title: Semiconductor device including uneven contact in passivation layer and method of manufacturing the same
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Application No.: US16929109Application Date: 2020-07-15
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Publication No.: US11309267B2Publication Date: 2022-04-19
- Inventor: Yen-Jui Chu , Jin-Neng Wu
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: JCIPRNET
- Main IPC: H01L23/00
- IPC: H01L23/00
Abstract:
Provided is a semiconductor device including a substrate, a passivation layer, and a connector. The passivation layer is disposed on the substrate. The connector is embedded in the passivation. An interface of the connector in contact with the passivation layer is uneven, thereby improving the structural stability of the connector. A method of manufacturing the semiconductor is also provided.
Public/Granted literature
- US20220020711A1 SEMICONDUCTOR DEVICE INCLUDING UNEVEN CONTACT IN PASSIVATION LAYER AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2022-01-20
Information query
IPC分类:
