Invention Grant
- Patent Title: Mask blank, phase shift mask, and method of manufacturing semiconductor device
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Application No.: US16755117Application Date: 2018-11-20
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Publication No.: US11333966B2Publication Date: 2022-05-17
- Inventor: Osamu Nozawa , Yasutaka Horigome , Hitoshi Maeda
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: JPJP2017-225528 20171124
- International Application: PCT/JP2018/042813 WO 20181120
- International Announcement: WO2019/102990 WO 20190531
- Main IPC: G03F1/32
- IPC: G03F1/32

Abstract:
Provided is a mask blank including a phase shift film. The phase shift film is made of a material containing a non-metallic element and silicon and includes first, second, and third layers; refractive indexes n1, n2, and n3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relations of n1 n3; and extinction coefficients k1, k2, and k3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relation of k1>k2>k3.
Public/Granted literature
- US20210364909A1 MASK BLANK, PHASE SHIFT MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-11-25
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