Invention Grant
- Patent Title: Deuterium-containing films
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Application No.: US16900181Application Date: 2020-06-12
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Publication No.: US11508584B2Publication Date: 2022-11-22
- Inventor: Sean M. Seutter , Mun Kyu Park , Hien M Le , Chih-Chiang Chuang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/30
- IPC: H01L21/30 ; C23C16/28 ; C23C16/455 ; H01L21/768 ; H01L21/265 ; H01L21/223
Abstract:
Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.
Information query
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