公开(公告)号：US11508584B2

公开(公告)日：2022-11-22

申请号：US16900181

申请日：2020-06-12

Applicant: Applied Materials, Inc.

Inventor： Sean M. Seutter ,  Mun Kyu Park ,  Hien M Le ,  Chih-Chiang Chuang

IPC: H01L21/30 ,  C23C16/28 ,  C23C16/455 ,  H01L21/768 ,  H01L21/265 ,  H01L21/223

Abstract: Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

公开(公告)号：US20230037450A1

公开(公告)日：2023-02-09

申请号：US17968056

申请日：2022-10-18

Applicant: Applied Materials, Inc.

Inventor： Sean M. Seutter ,  Mun Kyu Park ,  Hien M Le ,  Chih-Chiang Chuang

IPC: H01L21/30 ,  C23C16/28 ,  C23C16/455 ,  H01L21/768 ,  H01L21/265 ,  H01L21/223

Abstract: Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.