Invention Grant
- Patent Title: Data storing method, memory control circuit unit and memory storage device
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Application No.: US17337428Application Date: 2021-06-03
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Publication No.: US11609822B2Publication Date: 2023-03-21
- Inventor: Kok-Yong Tan
- Applicant: PHISON ELECTRONICS CORP.
- Applicant Address: TW Miaoli
- Assignee: PHISON ELECTRONICS CORP.
- Current Assignee: PHISON ELECTRONICS CORP.
- Current Assignee Address: TW Miaoli
- Agency: JCIPRNET
- Priority: TW110114441 20210422
- Main IPC: G06F11/07
- IPC: G06F11/07 ; G06F11/14 ; G06F1/30 ; G06F12/02 ; G06F11/30

Abstract:
A data storing method, a memory control circuit unit and a memory storage device are provided. The method includes the following. When the memory storage device is powered-on, it is determined whether a power loss state of the memory storage device matches an unexpected power loss state according to a power-off instruction. Data is written into a plurality of physical programming units using a single-page programming mode and not using a multi-page programming mode when it is determined that the power loss state matches the unexpected power loss state.
Public/Granted literature
- US20220342765A1 DATA STORING METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE DEVICE Public/Granted day:2022-10-27
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