Invention Grant
- Patent Title: Cap layer on a polarization layer to preserve channel sheet resistance
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Application No.: US16222976Application Date: 2018-12-17
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Publication No.: US11610971B2Publication Date: 2023-03-21
- Inventor: Sansaptak Dasgupta , Marko Radosavljevic , Han Wui Then , Nidhi Nidhi , Rahul Ramaswamy , Johann Rode , Paul Fischer , Walid Hafez
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L29/10 ; H01L29/778 ; H01L29/20 ; H01L21/02 ; H01L29/66 ; H01L21/762 ; H01L29/08 ; H01L29/423 ; H01L29/207
Abstract:
An integrated circuit structure comprises a base layer that includes a channel region, wherein the base layer and the channel region include group III-V semiconductor material. A polarization layer stack is over the base layer, wherein the polarization layer stack comprises a buffer stack, an interlayer over the buffer stack, a polarization layer over the interlayer. A cap layer stack is over the polarization layer to reduce transistor access resistance.
Information query
IPC分类:
