Invention Grant
- Patent Title: Magnetic memory devices with a transition metal dopant at an interface of free magnetic layers and methods of fabrication
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Application No.: US16024599Application Date: 2018-06-29
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Publication No.: US11616192B2Publication Date: 2023-03-28
- Inventor: Tofizur Rahman , Christopher J. Wiegand , Justin S. Brockman , Daniel G. Ouellette , Angeline K. Smith , Andrew Smith , Pedro A. Quintero , Juan G. Alzate-Vinasco , Oleg Golonzka
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP
- Main IPC: H01L43/02
- IPC: H01L43/02 ; G11C11/16 ; H01L27/22 ; H01L43/12 ; H01L43/10
Abstract:
A memory device includes a perpendicular magnetic tunnel junction (pMTJ) stack, between a bottom electrode and a top electrode. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet structure on the tunnel barrier. The free magnet structure includes a first free magnet on the tunnel barrier and a second free magnet above the first free magnet, wherein at least a portion of the free magnet proximal to an interface with the free magnet includes a transition metal. The free magnet structure having a transition metal between the first and the second free magnets advantageously improves the switching efficiency of the MTJ, while maintaining a thermal stability of at least 50 kT.
Public/Granted literature
- US20200006635A1 MAGNETIC MEMORY DEVICES AND METHODS OF FABRICATION Public/Granted day:2020-01-02
Information query
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