公开(公告)号：US11616192B2

公开(公告)日：2023-03-28

申请号：US16024599

申请日：2018-06-29

Applicant: Intel Corporation

Inventor： Tofizur Rahman ,  Christopher J. Wiegand ,  Justin S. Brockman ,  Daniel G. Ouellette ,  Angeline K. Smith ,  Andrew Smith ,  Pedro A. Quintero ,  Juan G. Alzate-Vinasco ,  Oleg Golonzka

IPC: H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01L43/12 ,  H01L43/10

Abstract: A memory device includes a perpendicular magnetic tunnel junction (pMTJ) stack, between a bottom electrode and a top electrode. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet structure on the tunnel barrier. The free magnet structure includes a first free magnet on the tunnel barrier and a second free magnet above the first free magnet, wherein at least a portion of the free magnet proximal to an interface with the free magnet includes a transition metal. The free magnet structure having a transition metal between the first and the second free magnets advantageously improves the switching efficiency of the MTJ, while maintaining a thermal stability of at least 50 kT.

公开(公告)号：US20200006635A1

公开(公告)日：2020-01-02

申请号：US16024599

申请日：2018-06-29

Applicant: Intel Corporation

Inventor： Tofizur Rahman ,  Christopher J. Wiegand ,  Justin S. Brockman ,  Daniel G. Ouellette ,  Angeline K. Smith ,  Andrew Smith ,  Pedro A. Quintero ,  Juan G. Alzate-Vinasco ,  Oleg Golonzka

IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16

Abstract: A memory device includes a perpendicular magnetic tunnel junction (pMTJ) stack, between a bottom electrode and a top electrode. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet structure on the tunnel barrier. The free magnet structure includes a first free magnet on the tunnel barrier and a second free magnet above the first free magnet, wherein at least a portion of the free magnet proximal to an interface with the free magnet includes a transition metal. The free magnet structure having a transition metal between the first and the second free magnets advantageously improves the switching efficiency of the MTJ, while maintaining a thermal stability of at least 50 kT.