Invention Grant
- Patent Title: Per-pixel detector bias control
-
Application No.: US16549069Application Date: 2019-08-23
-
Publication No.: US11626445B2Publication Date: 2023-04-11
- Inventor: Eric J. Beuville , Micky Harris , Ryan Boesch , Christian M. Boemler
- Applicant: RAYTHEON COMPANY
- Applicant Address: US MA Waltham
- Assignee: RAYTHEON COMPANY
- Current Assignee: RAYTHEON COMPANY
- Current Assignee Address: US MA Waltham
- Agency: Cantor Colburn LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/359 ; H01L27/148

Abstract:
A pixel includes a photo-diode, an integration capacitor arranged to receive a photo current from the photo-diode and to store charge developed from the photo current; and an injection transistor disposed between the photo-diode and the integration capacitor that controls flow of the photo current from the photo-diode to the integration capacitor, the injection transistor having a gate, a source electrically coupled to the photo-diode at a first node, and a drain electrically coupled to the integration capacitor. The injection transistor is a silicon-oxide-nitride-oxide-silicon (SONOS) FET having its gate set to a SONOS gate voltage to control a detector bias voltage of the photo-diode at the first node.
Public/Granted literature
- US20200066781A1 PER-PIXEL DETECTOR BIAS CONTROL Public/Granted day:2020-02-27
Information query
IPC分类: