Invention Grant
- Patent Title: Crystalline film containing a crystalline metal oxide and method for manufacturing the same under partial pressure
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Application No.: US17239986Application Date: 2021-04-26
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Publication No.: US11694894B2Publication Date: 2023-07-04
- Inventor: Yuichi Oshima , Katsuaki Kawara
- Applicant: FLOSFIA INC.
- Applicant Address: JP Kyoto
- Assignee: FLOSFIA INC.
- Current Assignee: FLOSFIA INC.
- Current Assignee Address: JP Kyoto
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP 20077066 2020.04.24 JP 20077069 2020.04.24
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/04 ; H01L29/24 ; C30B25/04 ; C30B25/18 ; C30B29/16 ; H02M3/335
Abstract:
A high-quality crystalline film having less impurity of Si and the like and useful in semiconductor devices is provided. A crystalline film containing a crystalline metallic oxide including gallium as a main component, wherein the crystalline film includes a Si in a content of 2×1015 cm−3 or less.
Public/Granted literature
- US20210335609A1 CRYSTALLINE FILM AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2021-10-28
Information query
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