Invention Grant
- Patent Title: Ultraviolet radiation sensor
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Application No.: US17444560Application Date: 2021-08-05
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Publication No.: US11698299B2Publication Date: 2023-07-11
- Inventor: Pikhay Evgeny , Yakov Roizin , Michael Yampolsky
- Applicant: Tower Semiconductor Ltd.
- Applicant Address: IL Migdal Haemek
- Assignee: TOWER SEMICONDUCTOR LTD.
- Current Assignee: TOWER SEMICONDUCTOR LTD.
- Current Assignee Address: IL Migdal-Haemek
- Agency: Reches Patents
- Main IPC: G01J1/42
- IPC: G01J1/42 ; G01J1/44

Abstract:
A UV radiation sensor that includes an area that is filled with a dielectric material, the area comprises a first portion of a first thickness and a second trench portion with dielectric of a second thickness, wherein the first thickness is smaller than the second thickness; a floating gate that comprises a first floating gate portion that is positioned above the first area portion and a second floating gate portion that is positioned above the trench portion, wherein the second floating gate portion comprises multiple segments, wherein there are one or more gaps between two or more of the multiple segments; a charging element for charging the floating gate; and a readout element for reading the floating gate.
Public/Granted literature
- US20220026266A1 ULTRAVIOLET RADIATION SENSOR Public/Granted day:2022-01-27
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