Invention Grant
- Patent Title: Materials and methods for forming resist bottom layer
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Application No.: US17814773Application Date: 2022-07-25
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Publication No.: US11703766B2Publication Date: 2023-07-18
- Inventor: Jing Hong Huang , Chien-Wei Wang , Shang-Wern Chang , Ching-Yu Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/38
- IPC: G03F7/38

Abstract:
A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.
Public/Granted literature
- US20220373891A1 MATERIALS AND METHODS FOR FORMING RESIST BOTTOM LAYER Public/Granted day:2022-11-24
Information query
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