公开(公告)号：US11703766B2

公开(公告)日：2023-07-18

申请号：US17814773

申请日：2022-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jing Hong Huang ,  Chien-Wei Wang ,  Shang-Wern Chang ,  Ching-Yu Chang

IPC: G03F7/38

CPC classification number: G03F7/38

Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.

公开(公告)号：US20230359124A1

公开(公告)日：2023-11-09

申请号：US18352556

申请日：2023-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jing Hong Huang ,  Chien-Wei Wang ,  Shang-Wern Chang ,  Ching-Yu Chang

IPC: G03F7/38

CPC classification number: G03F7/38

Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.

公开(公告)号：US20200006048A1

公开(公告)日：2020-01-02

申请号：US16414648

申请日：2019-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jing Hong Huang ,  Chien-Wei Wang ,  Shang-Wern Chang ,  Ching-Yu Chang

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/027

Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.

公开(公告)号：US20220373891A1

公开(公告)日：2022-11-24

申请号：US17814773

申请日：2022-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jing Hong Huang ,  Chien-Wei Wang ,  Shang-Wern Chang ,  Ching-Yu Chang

IPC: G03F7/38

Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.

公开(公告)号：US11955336B2

公开(公告)日：2024-04-09

申请号：US17238458

申请日：2021-04-23

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jing Hong Huang ,  Wei-Han Lai ,  Ching-Yu Chang

IPC: H01L21/027 ,  G03F7/16 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/8238

CPC classification number: H01L21/0276 ,  G03F7/162 ,  G03F7/168 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/823842 ,  H01L21/0332 ,  H01L21/31138

Abstract: Method of manufacturing a semiconductor device, includes forming a protective layer over substrate having a plurality of protrusions and recesses. The protective layer includes polymer composition including polymer having repeating units of one or more of:




Wherein a, b, c, d, e, f, g, h, and i are each independently H, —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2, wherein at least one of a, b, c, d, e, f, g, h, and i on each repeating unit is not H. R, R1, and R2 are each independently a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 hydroxyalkyl group, a C2-C10 alkoxy group, a C2-C10 alkoxy alkyl group, a C2-C10 acetyl group, a C3-C10 acetylalkyl group, a C1-C10 carboxyl group, a C2-C10 alkyl carboxyl group, or a C4-C10 cycloalkyl carboxyl group, and n is 2-1000. A resist layer is formed over the protective layer, and the resist layer is patterned.

公开(公告)号：US20220359190A1

公开(公告)日：2022-11-10

申请号：US17238458

申请日：2021-04-23

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jing Hong Huang ,  Wei-Han Lai ,  Ching-Yu Chang

IPC: H01L21/027 ,  H01L21/8238 ,  H01L21/3213 ,  H01L21/768 ,  G03F7/16

Abstract: Method of manufacturing a semiconductor device, includes forming a protective layer over substrate having a plurality of protrusions and recesses. The protective layer includes polymer composition including polymer having repeating units of one or more of: Wherein a, b, c, d, e, f, g, h, and i are each independently H, —OH, —ROH, —R(OH)2, —NH2, —NHR, —NR2, —SH, —RSH, or —R(SH)2, wherein at least one of a, b, c, d, e, f, g, h, and i on each repeating unit is not H. R, R1, and R2 are each independently a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 hydroxyalkyl group, a C2-C10 alkoxy group, a C2-C10 alkoxy alkyl group, a C2-C10 acetyl group, a C3-C10 acetylalkyl group, a C1-C10 carboxyl group, a C2-C10 alkyl carboxyl group, or a C4-C10 cycloalkyl carboxyl group, and n is 2-1000. A resist layer is formed over the protective layer, and the resist layer is patterned.

公开(公告)号：US11476108B2

公开(公告)日：2022-10-18

申请号：US16984070

申请日：2020-08-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jing Hong Huang ,  Ching-Yu Chang ,  Wei-Han Lai

IPC: H01L21/02

Abstract: A method of manufacturing a semiconductor device includes forming a spin on carbon layer comprising a spin on carbon composition over a semiconductor substrate. The spin on carbon layer is first heated at a first temperature to partially crosslink the spin on carbon layer. The spin on carbon layer is second heated at a second temperature to further crosslink the spin on carbon layer. An overlayer is formed over the spin on carbon layer. The second temperature is higher than the first temperature.

公开(公告)号：US11442364B2

公开(公告)日：2022-09-13

申请号：US16414648

申请日：2019-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jing Hong Huang ,  Chien-Wei Wang ,  Shang-Wern Chang ,  Ching-Yu Chang

IPC: G03F7/38

Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.