Invention Grant
- Patent Title: PSPI-based patterning method for RDL
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Application No.: US17343402Application Date: 2021-06-09
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Publication No.: US11749668B2Publication Date: 2023-09-05
- Inventor: ChangOh Kim , JinHee Jung
- Applicant: STATS ChipPAC Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC Pte. Ltd
- Current Assignee: STATS ChipPAC Pte. Ltd
- Current Assignee Address: SG Singapore
- Agency: PATENT LAW GROUP: Atkins and Associates, P.C.
- Agent Brian M. Kaufman; Robert D. Atkins
- Main IPC: H01L25/00
- IPC: H01L25/00 ; H01L21/78 ; H01L21/56 ; H01L25/065 ; H01L23/552

Abstract:
A semiconductor device is formed by providing a semiconductor package including a shielding layer and forming a slot in the shielding layer using a laser. The laser is turned on and exposed to the shielding layer with a center of the laser disposed over a first point of the shielding layer. The laser is moved in a loop while the laser remains on and exposed to the shielding layer. Exposure of the laser to the shielding layer is stopped when the center of the laser is disposed over a second point of the shielding layer. A distance between the first point and the second point is approximately equal to a radius of the laser.
Public/Granted literature
- US20220399323A1 PSPI-based Patterning Method for RDL Public/Granted day:2022-12-15
Information query
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