A semiconductor memory structure includes a semiconductor substrate, a bit line disposed on the semiconductor substrate, and a capacitor contact disposed on the side of the bit line. The capacitor contact includes a semiconductor plug disposed on the semiconductor substrate, a metal plug disposed on the semiconductor plug, a metal silicide liner extending along the sidewalls and bottom of the metal plug, and a nitride layer disposed on the metal silicide liner. The top surface of the metal silicide liner is lower than the top surface of the metal plug. The nitride layer surrounds the top portion of the metal plug.