Invention Grant
- Patent Title: Mask blank, method for manufacturing reflective mask, and method for manufacturing semiconductor device
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Application No.: US17668597Application Date: 2022-02-10
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Publication No.: US11762279B2Publication Date: 2023-09-19
- Inventor: Osamu Nozawa , Ryo Ohkubo , Hiroaki Shishido
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: JP 17034706 2017.02.27
- Main IPC: G03F1/24
- IPC: G03F1/24 ; H01L21/033

Abstract:
A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.
Public/Granted literature
- US20220163880A1 MASK BLANK, METHOD FOR MANUFACTURING REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2022-05-26
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