Invention Grant
- Patent Title: III-V fins by aspect ratio trapping and self-aligned etch to remove rough epitaxy surface
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Application No.: US17245634Application Date: 2021-04-30
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Publication No.: US11776956B2Publication Date: 2023-10-03
- Inventor: Kangguo Cheng , Jeehwan Kim
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Stosch Sabo
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/66 ; H01L21/308 ; H01L21/306 ; H01L21/02 ; H01L29/78 ; H01L29/10 ; H01L21/8234 ; H01L29/201
Abstract:
A semiconductor device that includes a fin structure of a type III-V semiconductor material that is substantially free of defects, and has sidewalls that are substantially free of roughness caused by epitaxially growing the type III-V semiconductor material abutting a dielectric material. The semiconductor device further includes a gate structure present on a channel portion of the fin structure; and a source region and a drain region present on opposing sides of the gate structure.
Public/Granted literature
- US20210249410A1 III-V FINS BY ASPECT RATIO TRAPPING AND SELF-ALIGNED ETCH TO REMOVE ROUGH EPITAXY SURFACE Public/Granted day:2021-08-12
Information query
IPC分类:
