- Patent Title: Geometry based three dimensional reconstruction of a semiconductor specimen by solving an optimization problem, using at least two SEM images acquired at different illumination angles
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Application No.: US17024578Application Date: 2020-09-17
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Publication No.: US11953316B2Publication Date: 2024-04-09
- Inventor: Rafael Bistritzer , Anna Levant , Moshe Eliasof , Michael Chemama , Konstantin Chirko
- Applicant: Applied Materials Israel Ltd.
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel Ltd.
- Current Assignee: Applied Materials Israel Ltd.
- Current Assignee Address: IL Rehovot
- Agency: Lowenstein Sandler LLP
- Main IPC: H01J37/147
- IPC: H01J37/147 ; G01B15/02 ; G01N23/2251

Abstract:
There is provided a system and a method comprising obtaining a first (respectively second) image of an area of the semiconductor specimen acquired by an electron beam examination tool at a first (respectively second) illumination angle, determining a plurality of height values informative of a height profile of the specimen in the area, the determination comprising solving an optimization problem which comprises a plurality of functions, each function being representative of a difference between data informative of a grey level intensity at a first location in the first image and data informative of a grey level intensity at a second location in the second image, wherein, for each function, the second location is determined with respect to the first location, or conversely, when solving the optimization problem, wherein a distance between the first and the second locations depends on the height profile, and the first and second illumination angles.
Public/Granted literature
- US20220082376A1 THREE-DIMENSIONAL RECONSTRUCTION OF A SEMICONDUCTOR SPECIMEN Public/Granted day:2022-03-17
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