Invention Grant
- Patent Title: Methods of forming material layer, semiconductor devices, and methods of manufacturing the same
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Application No.: US17358089Application Date: 2021-06-25
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Publication No.: US11967502B2Publication Date: 2024-04-23
- Inventor: Younsoo Kim , Jaewoon Kim , Haeryong Kim , Jinho Lee , Tsubasa Shiratori
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.,ADEKA CORPORATION
- Current Assignee: Samsung Electronics Co., Ltd.,ADEKA CORPORATION
- Current Assignee Address: KR; JP
- Agency: Myers Bigel, P.A.
- Priority: KR 20200080504 2020.06.30 KR 20210074189 2021.06.08
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L49/02

Abstract:
Methods of forming a material layer according to some embodiments of the inventive concept may include a deposition cycle including providing an adsorption inhibitor on a substrate, purging an excess amount of the adsorption inhibitor, providing a metal precursor on the substrate, purging an excess amount of the metal precursor, and supplying a reactant to form a material layer on the substrate. The adsorption inhibitor may include a group 15 element or a group 16 element.
Public/Granted literature
- US20210407795A1 METHODS OF FORMING MATERIAL LAYER, SEMICONDUCTOR DEVICES, AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2021-12-30
Information query
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