Invention Grant
- Patent Title: Memory bit cell with homogeneous layout pattern of base layers for high density memory macros
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Application No.: US17724123Application Date: 2022-04-19
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Publication No.: US12008237B2Publication Date: 2024-06-11
- Inventor: Kurt M. English , Charwak Suresh Apte
- Applicant: Advanced Micro Devices, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kowert, Hood, Munyon, Rankin & Goetzel, P.C.
- Agent Rory D. Rankin
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G06F3/06 ; G11C11/419

Abstract:
An apparatus and method for designing memory macro blocks. A memory includes one or more memory banks, each with one or more arrays and input/output (I/O) blocks used to perform read accesses and write accesses. An array that utilizes multiple memory bit cells, and the I/O blocks are placed in a manner that they are abutting one another. The layout of the memory bit cells and the I/O blocks use a same subset of parameters of a semiconductor fabrication process. As a result, the memory bank does not include the placement of any boundary cells, which are used to improve yield of semiconductor layout. By skipping the use of the boundary cells, the dimensions of the memory bank are reduced, and layout density increases. Additionally, the memory bit cells use one or more p-type devices for one or more read pass gates.
Public/Granted literature
- US20230333742A1 MEMORY BIT CELL WITH HOMOGENEOUS LAYOUT PATTERN OF BASE LAYERS FOR HIGH DENSITY MEMORY MACROS Public/Granted day:2023-10-19
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