Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US17390101Application Date: 2021-07-30
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Publication No.: US12027490B2Publication Date: 2024-07-02
- Inventor: Richard Knipper , Alexander Heinrich , Thorsten Scharf , Stefan Schwab
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: EP 190296 2020.08.10
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A method for fabricating a semiconductor device includes providing a semiconductor die, arranging an electrical connector over the semiconductor die, the electrical connector including a conductive core, an absorbing feature arranged on a first side of the conductive core, and a solder layer arranged on a second side of the conductive core, opposite the first side and facing the semiconductor die, and soldering the electrical connector onto the semiconductor die by heating the solder layer with a laser, wherein the laser irradiates the absorbing feature and absorbed energy is transferred from the absorbing feature through the conductive core to the solder layer.
Public/Granted literature
- US11908830B2 Semiconductor device and method for fabricating the same Public/Granted day:2024-02-20
Information query
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