Invention Grant
- Patent Title: Integrated high efficiency transistor cooling
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Application No.: US17344231Application Date: 2021-06-10
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Publication No.: US12051638B2Publication Date: 2024-07-30
- Inventor: Daniel Chanemougame , Lars Liebmann , Jeffrey Smith , Paul Gutwin
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L23/29
- IPC: H01L23/29 ; H01L21/8234 ; H01L21/8238 ; H01L23/473 ; H01L27/088 ; H01L27/092
Abstract:
A microfabrication device is provided. The microfabrication device includes a transistor plane formed on a substrate, the transistor plane including a plurality of field effect transistors; fluidic passages formed within the transistor plane; a dielectric fluid added to the fluidic passages; and a circulating mechanism configured to circulate the dielectric fluid through the transistor plane.
Public/Granted literature
- US20220223496A1 INTEGRATED HIGH EFFICIENCY TRANSISTOR COOLING Public/Granted day:2022-07-14
Information query
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