Invention Grant
- Patent Title: Direct gang bonding methods including directly bonding first element to second element to form bonded structure without adhesive
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Application No.: US16874527Application Date: 2020-05-14
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Publication No.: US12080672B2Publication Date: 2024-09-03
- Inventor: Belgacem Haba , Laura Wills Mirkarimi , Javier A. DeLaCruz , Rajesh Katkar , Cyprian Emeka Uzoh , Guilian Gao , Thomas Workman
- Applicant: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
- Applicant Address: US CA San Jose
- Assignee: ADEIA Semiconductor Bonding Technologies Inc.
- Current Assignee: ADEIA Semiconductor Bonding Technologies Inc.
- Current Assignee Address: US CA San Jose
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31
Abstract:
A bonded structure can comprise a first element and a second element. The first element has a first dielectric layer including a first bonding surface and at least one first side surface of the first element. The second element has a second dielectric layer including a second bonding surface and at least one second side surface of the second element. The second bonding surface of the second element is directly bonded to the first bonding surface of the first element without an adhesive.
Public/Granted literature
- US20210098412A1 DIRECT GANG BONDING METHODS AND STRUCTURES Public/Granted day:2021-04-01
Information query
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