Invention Grant
- Patent Title: High electron mobility transistor
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Application No.: US18238534Application Date: 2023-08-28
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Publication No.: US12080778B2Publication Date: 2024-09-03
- Inventor: An-Chi Liu , Chun-Hsien Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 1910874778.8 2019.09.17
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/201 ; H01L29/40 ; H01L29/66
Abstract:
A high electron mobility transistor (HEMT) includes a buffer layer on a substrate, a barrier layer on the buffer layer, a gate electrode on the barrier layer, a field plate adjacent to two sides of the gate electrode, and a first passivation layer adjacent to two sides of the gate electrode. Preferably, a sidewall of the field plate includes a first curve.
Public/Granted literature
- US20230402527A1 HIGH ELECTRON MOBILITY TRANSISTOR Public/Granted day:2023-12-14
Information query
IPC分类:
