Invention Grant
- Patent Title: Metal cut optimization for standard cells
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Application No.: US18341545Application Date: 2023-06-26
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Publication No.: US12106033B2Publication Date: 2024-10-01
- Inventor: Cheok-Kei Lei , Zhe-Wei Jiang , Chi-Yu Lu , Yi-Hsin Ko , Chi-Lin Liu , Hui-Zhong Zhuang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C
- Main IPC: G06F30/398
- IPC: G06F30/398 ; G06F30/327 ; G06F30/392 ; H01L23/52 ; H01L23/522

Abstract:
The present disclosure describes a method for optimizing metal cuts in standard cells. The method includes placing a standard cell in a layout area and inserting a metal cut along a metal interconnect of the standard cell at a location away from a boundary of the standard cell. The method further includes disconnecting, at the location, a metal portion of the metal interconnect from a remaining portion of the metal interconnect based on the metal cut.
Public/Granted literature
- US20230334208A1 METAL CUT OPTIMIZATION FOR STANDARD CELLS Public/Granted day:2023-10-19
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