Invention Grant
- Patent Title: Three-dimensional memory arrays with layer selector transistors
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Application No.: US17368329Application Date: 2021-07-06
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Publication No.: US12114479B2Publication Date: 2024-10-08
- Inventor: Wilfred Gomes , Mauro J. Kobrinsky , Abhishek A. Sharma , Rajesh Kumar , Kinyip Phoa , Elliot Tan , Tahir Ghani , Swaminathan Sivakumar
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Akona IP PC
- Main IPC: H10B12/00
- IPC: H10B12/00 ; G11C5/06 ; H01L23/522 ; H01L23/528 ; H01L27/06 ; H01L29/786

Abstract:
A three-dimensional memory array may include a first memory array and a second memory array, stacked above the first. Some memory cells of the first array may be coupled to a first layer selector transistor, while some memory cells of the second array may be coupled to a second layer selector transistor. The first and second layer selector transistor may be coupled to one another and to a peripheral circuit that controls operation of the first and/or second memory arrays. A different layer selector transistor may be used for each row of memory cells of a given memory array and/or for each column of memory cells of a given memory array. Such designs may allow increasing density of memory cells in a memory array having a given footprint area, or, conversely, reducing the footprint area of the memory array with a given memory cell density.
Public/Granted literature
- US20210335791A1 THREE-DIMENSIONAL MEMORY ARRAYS WITH LAYER SELECTOR TRANSISTORS Public/Granted day:2021-10-28
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