Invention Grant
- Patent Title: Method of pre-treating substrate and method of directly forming graphene using the same
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Application No.: US16807702Application Date: 2020-03-03
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Publication No.: US12217958B2Publication Date: 2025-02-04
- Inventor: Keunwook Shin , Janghee Lee , Seunggeol Nam , Hyeonjin Shin , Hyunseok Lim , Alum Jung , Kyung-Eun Byun , Jeonil Lee , Yeonchoo Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: HARNESS, DICKEY & PIERCE, P.L.C.
- Priority: KR10-2019-0024851 20190304,KR10-2020-0026762 20200303
- Main IPC: C23C16/02
- IPC: C23C16/02 ; C23C16/26 ; H01L21/02
Abstract:
A method of pre-treating a substrate on which graphene will be directly formed may include pre-treating the substrate using a pre-treatment gas including at least a carbon source and hydrogen.
Public/Granted literature
- US20200286732A1 METHOD OF PRE-TREATING SUBSTRATE AND METHOD OF DIRECTLY FORMING GRAPHENE USING THE SAME Public/Granted day:2020-09-10
Information query
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