Invention Grant
- Patent Title: Repellent electrode for electron repelling
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Application No.: US18448026Application Date: 2023-08-10
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Publication No.: US12243707B2Publication Date: 2025-03-04
- Inventor: Ching-Heng Yen , Jen-Chung Chiu , Tai-Kun Kao , Lu-Hsun Lin , Tsung-Min Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- Main IPC: H01J37/08
- IPC: H01J37/08 ; H01J37/317 ; H01J37/32

Abstract:
The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.
Public/Granted literature
- US20230386778A1 REPELLENT ELECTRODE FOR ELECTRON REPELLING Public/Granted day:2023-11-30
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