Invention Grant
- Patent Title: Gallium nitride (GaN) selective epitaxial windows for integrated circuit technology
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Application No.: US17458097Application Date: 2021-08-26
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Publication No.: US12302618B2Publication Date: 2025-05-13
- Inventor: Samuel James Bader , Pratik Koirala , Nicole K. Thomas , Han Wui Then , Marko Radosavljevic
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L29/267
- IPC: H01L29/267 ; H01L21/02 ; H01L29/40 ; H01L29/66 ; H01L29/778 ; H10D30/01 ; H10D30/47 ; H10D62/82 ; H10D64/00
Abstract:
An integrated circuit structure includes a substrate including silicon, the substrate having a top surface. A first trench is in the substrate, the first trench having a first width and a first height. A second trench is in the substrate, the second trench having a second width and a second height. The second width is greater than the first width, and the second height is greater than the first height. A first island is in the first trench, the first island including gallium and nitrogen and having first corner facets at least partially below the top surface of the substrate. A second island is in the second trench, the second island including gallium and nitrogen and having second corner facets at least partially below the top surface of the substrate.
Public/Granted literature
- US20230062922A1 GALLIUM NITRIDE (GAN) SELECTIVE EPITAXIAL WINDOWS FOR INTEGRATED CIRCUIT TECHNOLOGY Public/Granted day:2023-03-02
Information query
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