Invention Application
- Patent Title: Deposition and Selective Removal of Conducting Helplayer for Nanostructure Processing
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Application No.: US14795598Application Date: 2015-07-09
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Publication No.: US20150318085A1Publication Date: 2015-11-05
- Inventor: Jonas S. T. Berg , Vincent Desmaris , Mohammad Shafiqul Kabir , Muhammad Amin Saleem , David Brud
- Applicant: Smoltek AB
- Main IPC: H01B13/00
- IPC: H01B13/00

Abstract:
A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.
Information query