公开(公告)号：US20180155824A1

公开(公告)日：2018-06-07

申请号：US15801734

申请日：2017-11-02

Applicant: Smoltek AB

Inventor： Jonas S. T. Berg ,  Vincent Desmaris ,  Mohammad Shafiqul Kabir ,  Muhammad Amin Saleem ,  David Brud

IPC: C23C16/26 ,  H01L23/522 ,  H01L23/532 ,  H01L23/367 ,  H01L23/373 ,  H01L21/768 ,  H01L21/48 ,  G02B6/26 ,  C23C16/503

CPC classification number: C23C16/26 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/15 ,  C23C16/503 ,  G02B6/26 ,  H01B13/0026 ,  H01L21/0237 ,  H01L21/02491 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/4871 ,  H01L21/76802 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/3677 ,  H01L23/3737 ,  H01L23/49827 ,  H01L23/5226 ,  H01L23/53276 ,  H01L29/0665 ,  H01L29/66439 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for making one or more nanostructures is disclosed. The method includes depositing a catalyst layer on the substrate; depositing an insulator layer on the catalyst layer; providing a continuous patterned conducting helplayer on the insulator layer; creating via holes through the insulator layer from the conducting helplayer to the catalyst layer; growing the one or more nanostructures on the catalyst layer through the via holes; and selectively removing the conducting helplayer after growing the one or more nanostructure.

公开(公告)号：US09114993B2

公开(公告)日：2015-08-25

申请号：US14489903

申请日：2014-09-18

Applicant: Smoltek AB

Inventor： Jonas T. Berg ,  Vincent Desmaris ,  Mohammad Shafiqul Kabir ,  Muhammad Amin Saleem ,  David Brud

IPC: H01L23/48 ,  C01B31/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/768 ,  H01L29/06 ,  H01L29/66 ,  H01L23/498 ,  H01L21/02

CPC classification number: C23C16/26 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/15 ,  C23C16/503 ,  G02B6/26 ,  H01B13/0026 ,  H01L21/0237 ,  H01L21/02491 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/4871 ,  H01L21/76802 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/3677 ,  H01L23/3737 ,  H01L23/49827 ,  H01L23/5226 ,  H01L23/53276 ,  H01L29/0665 ,  H01L29/66439 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.

Abstract translation: 公开了一种制造一种或多种纳米结构的方法，所述方法包括：在衬底的上表面上沉积导电层; 在导电层上沉积图案化的催化剂层; 在催化剂层上生长一个或多个纳米结构; 并且选择性地去除所述一个或多个纳米结构之间和周围的导电层。 还公开了一种包括衬底的器件，其中衬底包括由一个或多个绝缘区域隔开的一个或多个暴露的金属岛; 设置在所述基板上的导电助垫，其覆盖所述一个或多个暴露的金属岛或绝缘区域中的至少一些; 设置在导电助听器上的催化剂层; 以及设置在催化剂层上的一个或多个纳米结构。

公开(公告)号：US20130334704A1

公开(公告)日：2013-12-19

申请号：US13961532

申请日：2013-08-07

Applicant: Smoltek AB

Inventor： Jonas S. T. Berg ,  Vincent Desmaris ,  Mohammad Shafiqul Kabir ,  Muhammad Amin Saleem ,  David Brud

IPC: H01L21/768 ,  H01L23/498

CPC classification number: C23C16/26 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/15 ,  C23C16/503 ,  G02B6/26 ,  H01B13/0026 ,  H01L21/0237 ,  H01L21/02491 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/4871 ,  H01L21/76802 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/3677 ,  H01L23/3737 ,  H01L23/49827 ,  H01L23/5226 ,  H01L23/53276 ,  H01L29/0665 ,  H01L29/66439 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.

公开(公告)号：US20150004092A1

公开(公告)日：2015-01-01

申请号：US14489903

申请日：2014-09-18

Applicant: Smoltek AB

Inventor： Jonas T. Berg ,  Vincent Desmaris ,  Mohammad Shafiqul Kabir ,  Muhammad Amin Saleem ,  David Brud

IPC: C01B31/02

CPC classification number: C23C16/26 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/15 ,  C23C16/503 ,  G02B6/26 ,  H01B13/0026 ,  H01L21/0237 ,  H01L21/02491 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/4871 ,  H01L21/76802 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/3677 ,  H01L23/3737 ,  H01L23/49827 ,  H01L23/5226 ,  H01L23/53276 ,  H01L29/0665 ,  H01L29/66439 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.

公开(公告)号：US20140360661A1

公开(公告)日：2014-12-11

申请号：US14467461

申请日：2014-08-25

Applicant: Smoltek AB

Inventor： Mohammad Shafiqul Kabir ,  Andrzej Brud

IPC: B32B37/12 ,  C09J9/02 ,  B32B37/16 ,  B32B37/10 ,  B32B38/00 ,  B32B37/06

CPC classification number: B32B37/12 ,  B32B37/06 ,  B32B37/10 ,  B32B37/16 ,  B32B38/0008 ,  B32B2037/1253 ,  B32B2307/202 ,  B32B2307/302 ,  B32B2307/706 ,  B32B2309/02 ,  B32B2309/12 ,  B32B2310/0831 ,  B32B2313/04 ,  B32B2457/00 ,  B82Y10/00 ,  C09J9/02 ,  H01L23/49811 ,  H01L23/49877 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/05016 ,  H01L2224/05026 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/29006 ,  H01L2224/2929 ,  H01L2224/29393 ,  H01L2224/29499 ,  H01L2224/32145 ,  H01L2224/83855 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/07811 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/1433 ,  H01L2924/15788 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  Y10T428/24174 ,  H01L2224/29101 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/01026 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: An apparatus, comprising two conductive surfaces or layers and a nanostructure assembly bonded to the two conductive surfaces or layers to create electrical or thermal connections between the two conductive surfaces or layers, and a method of making same.

Abstract translation: 一种包括两个导电表面或层的装置，以及结合到两个导电表面或层的纳米结构组件，以在两个导电表面或层之间形成电连接或热连接，以及制造它们的方法。

公开(公告)号：US20150318085A1

公开(公告)日：2015-11-05

申请号：US14795598

申请日：2015-07-09

Applicant: Smoltek AB

Inventor： Jonas S. T. Berg ,  Vincent Desmaris ,  Mohammad Shafiqul Kabir ,  Muhammad Amin Saleem ,  David Brud

IPC: H01B13/00

CPC classification number: C23C16/26 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/15 ,  C23C16/503 ,  G02B6/26 ,  H01B13/0026 ,  H01L21/0237 ,  H01L21/02491 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/4871 ,  H01L21/76802 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/3677 ,  H01L23/3737 ,  H01L23/49827 ,  H01L23/5226 ,  H01L23/53276 ,  H01L29/0665 ,  H01L29/66439 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.

公开(公告)号：US08866307B2

公开(公告)日：2014-10-21

申请号：US13961532

申请日：2013-08-07

Applicant: Smoltek AB

Inventor： Jonas S. T. Berg ,  Vincent Desmaris ,  Mohammad Shafiqul Kabir ,  Muhammad Amin Saleem ,  David Brud

IPC: H01L23/48 ,  H01L21/768 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/06 ,  H01L29/66 ,  H01L23/498 ,  H01L21/02

CPC classification number: C23C16/26 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/15 ,  C23C16/503 ,  G02B6/26 ,  H01B13/0026 ,  H01L21/0237 ,  H01L21/02491 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/4871 ,  H01L21/76802 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/3677 ,  H01L23/3737 ,  H01L23/49827 ,  H01L23/5226 ,  H01L23/53276 ,  H01L29/0665 ,  H01L29/66439 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.

Abstract translation: 公开了一种制造一种或多种纳米结构的方法，所述方法包括：在衬底的上表面上沉积导电层; 在导电层上沉积图案化的催化剂层; 在催化剂层上生长一个或多个纳米结构; 并且选择性地去除所述一个或多个纳米结构之间和周围的导电层。 还公开了一种包括衬底的器件，其中衬底包括由一个或多个绝缘区域隔开的一个或多个暴露的金属岛; 设置在所述基板上的导电助垫，其覆盖所述一个或多个暴露的金属岛或绝缘区域中的至少一些; 设置在导电助听器上的催化剂层; 以及设置在催化剂层上的一个或多个纳米结构。