Invention Application
US20160161837A1 REFLECTIVE MASK BLANK, METHOD OF MANUFACTURING REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
反射掩模层,制造反射掩模层的方法,反射掩模和制造半导体器件的方法

  • Patent Title: REFLECTIVE MASK BLANK, METHOD OF MANUFACTURING REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
  • Patent Title (中): 反射掩模层,制造反射掩模层的方法,反射掩模和制造半导体器件的方法
  • Application No.: US14787497
    Application Date: 2014-08-29
  • Publication No.: US20160161837A1
    Publication Date: 2016-06-09
  • Inventor: Kazuhiro HAMAMOTOTatsuo ASAKAWATsutomu SHOKI
  • Applicant: HOYA CORPORATION
  • Applicant Address: JP Tokyo
  • Assignee: HOYA CORPORATION
  • Current Assignee: HOYA CORPORATION
  • Current Assignee Address: JP Tokyo
  • Priority: JP2013-179123 20130830
  • International Application: PCT/JP2014/072688 WO 20140829
  • Main IPC: G03F1/24
  • IPC: G03F1/24 G03F7/20
REFLECTIVE MASK BLANK, METHOD OF MANUFACTURING REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
Provided is a reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein the root mean square roughness (Rms), obtained by measuring a 3 μm×3 μm region on the surface of the reflective mask blank on which the mask blank multilayer film is formed with an atomic force microscope, is not more than 0.5 nm and the power spectrum density at a spatial frequency of 1 μm−1 to 10 μm−1 is not more than 50 nm4.
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